X-ray absorption near edge structures of silicon nitride thin film by pulsed laser deposition

Takeo Suga*, Teruyasu Mizoguchi, Masahiro Kunisu, Kazuyoshi Tatsumi, Tomoyuki Yamamoto, Isao Tanaka, Toshimori Sekine

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Silicon nitride thin film was fabricated by pulsed laser deposition using KrF excimer laser and a silicon nitride compact as a target. The deposition was carried out on Al2O3 (0001) at 1173 K in N2 gas pressure of 0.27Pa. The X-ray diffraction did not provide any structural information of the deposited thin films except that it is composed of amorphous and/or micro-crystalline structure. X-ray absorption near edge structures at Si-K edge revealed that local arrangement of Si is not random. It should be composed of SiN4 unit similar to the case of α-Si 3N4 crystal. Metallic Si component cannot be found in XANES.

本文言語English
ページ(範囲)2039-2041
ページ数3
ジャーナルMaterials Transactions
45
7
DOI
出版ステータスPublished - 2004 7
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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