X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections

Teruaki Takeuchi*, Kosuke Tatsumura, Iwao Ohdomari, Takayoshi Shimura, Masao Nagase

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Comparisons of the experimental and calculated X-ray diffraction profiles have been made for Si nanowires with trapezoidal cross-sections. Examined samples are periodically arranged nanowires prepared on a silicon-on-insulator wafer by electron-beam lithography, so that they are isolated from Si substrate. The nanowire periodicity gives rise to diffractions at additional reciprocal lattice points, which we employ to avoid the mixture of the diffraction from the Si substrate. The experimental diffraction profiles are found to be in good agreement with the square modulus of the Fourier transform of the trapezoidal cross-sections determined from transmission electron micrographs.

本文言語English
ページ(範囲)2559-2564
ページ数6
ジャーナルPhysica B: Condensed Matter
406
13
DOI
出版ステータスPublished - 2011 7 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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