X-ray diffraction reciprocal space maps and pole figures were used to analyze the cubic GaN epitaxial layers grown on (0 0 1) GaAs by r.f. plasma source MBE; the presence of hexagonal phase in cubic GaN layers was detected by high resolution x-ray analysis and the relationships among various crystal axes of cubic and hexagonal phase GaN were analyzed with respect to V/III source-supply ratio. As for the growth conditions of the epitaxial layers, the V/III ratio was found to drastically affect the quality of the layers. High-temperature growth under near-stoichiometric conditions was necessary to obtain high quality epitaxial layers. It was found that inclusion of the hexagonal phase in the cubic GaN layers could be less than 0.4%, though previously reported typical c-GaN epitaxial layers included as much as 10-20% hexagonal phase GaN. On the basis of the measurements and analyses of reciprocal space maps and pole figures, it was revealed that the orientation of crystal axes of the hexagonal phase was unique in the present GaN epitaxial layers and they were different from those of previously reported c-GaN epitaxial layers.
|ジャーナル||Journal of Materials Science: Materials in Electronics|
|出版ステータス||Published - 1999|
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