X-ray photoelectron spectroscopy (Xps) analysis of oxide formation on silicon with high-purity ozone

Akira M. Kurokawa, Shingo M. Ichimura

研究成果: Article査読

29 被引用数 (Scopus)

抄録

Initial oxide formation on a Si(lll) surface with high-purity ozone (more than 80% ozone concentration at the sample position) is investigated by X-ray photoelectron spectroscopy (XPS). The suboxide formed by oxidation is characterized from Si2P spectra. From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. Ozone oxidizes a monohydride Si surface, which oxygen does not oxidize appreciably.

本文言語English
ページ(範囲)L1606-L1608
ジャーナルJapanese journal of applied physics
34
12
DOI
出版ステータスPublished - 1995 12
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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