X-ray photoelectron spectroscopy (Xps) analysis of oxide formation on silicon with high-purity ozone

Akira M. Kurokawa, Shingo Ichimura

研究成果: Article

29 引用 (Scopus)

抄録

Initial oxide formation on a Si(lll) surface with high-purity ozone (more than 80% ozone concentration at the sample position) is investigated by X-ray photoelectron spectroscopy (XPS). The suboxide formed by oxidation is characterized from Si2P spectra. From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. Ozone oxidizes a monohydride Si surface, which oxygen does not oxidize appreciably.

元の言語English
ページ(範囲)L1606-L1608
ジャーナルJapanese Journal of Applied Physics
34
発行部数12
DOI
出版物ステータスPublished - 1995 1 1
外部発表Yes

Fingerprint

Ozone
ozone
purity
X ray photoelectron spectroscopy
photoelectron spectroscopy
Silicon
Oxides
oxides
silicon
x rays
Oxygen
oxygen
Oxidation
oxidation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

@article{3b723d0de4f24b8e9040e9f67fb6cbf4,
title = "X-ray photoelectron spectroscopy (Xps) analysis of oxide formation on silicon with high-purity ozone",
abstract = "Initial oxide formation on a Si(lll) surface with high-purity ozone (more than 80{\%} ozone concentration at the sample position) is investigated by X-ray photoelectron spectroscopy (XPS). The suboxide formed by oxidation is characterized from Si2P spectra. From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. Ozone oxidizes a monohydride Si surface, which oxygen does not oxidize appreciably.",
keywords = "Hydrogen termination, Low-temperature oxidation, Ozone, Si (111), Silicon oxidation, Silicon oxide, Suboxide, XPS",
author = "Kurokawa, {Akira M.} and Shingo Ichimura",
year = "1995",
month = "1",
day = "1",
doi = "10.1143/JJAP.34.L1606",
language = "English",
volume = "34",
pages = "L1606--L1608",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "12",

}

TY - JOUR

T1 - X-ray photoelectron spectroscopy (Xps) analysis of oxide formation on silicon with high-purity ozone

AU - Kurokawa, Akira M.

AU - Ichimura, Shingo

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Initial oxide formation on a Si(lll) surface with high-purity ozone (more than 80% ozone concentration at the sample position) is investigated by X-ray photoelectron spectroscopy (XPS). The suboxide formed by oxidation is characterized from Si2P spectra. From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. Ozone oxidizes a monohydride Si surface, which oxygen does not oxidize appreciably.

AB - Initial oxide formation on a Si(lll) surface with high-purity ozone (more than 80% ozone concentration at the sample position) is investigated by X-ray photoelectron spectroscopy (XPS). The suboxide formed by oxidation is characterized from Si2P spectra. From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. Ozone oxidizes a monohydride Si surface, which oxygen does not oxidize appreciably.

KW - Hydrogen termination

KW - Low-temperature oxidation

KW - Ozone

KW - Si (111)

KW - Silicon oxidation

KW - Silicon oxide

KW - Suboxide

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=0029538009&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029538009&partnerID=8YFLogxK

U2 - 10.1143/JJAP.34.L1606

DO - 10.1143/JJAP.34.L1606

M3 - Article

AN - SCOPUS:0029538009

VL - 34

SP - L1606-L1608

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12

ER -