XPS analysis of ultrathin SiO2 film growth on Si by ozone

S. Ichimura, K. Koike, A. Kurokawa, K. Nakamura, H. Itoh

研究成果: Conference article査読

10 被引用数 (Scopus)

抄録

We investigated the initial oxidation of Si(100) with ozone by comparison with oxidation by oxygen molecules using a specially fabricated ozone generator that could supply concentrated (typically 30 at.%) ozone gas at 1 atm pressure. We measured the thickness of the SiO2 film on the Si by XPS, using a thermal oxide film with a known thickness as a reference. We observed the growth of an SiO2 film on Si by ozone even at a sample temperature of 200 °C, verifying the strong oxidation power of ozone. The SiO2 film was approximately 2.3 nm thick for 100 min of exposure. The kinetics of oxidation with ozone showed a power law dependence relative to exposure time, with almost the same power value for the ozone gas at 1 atm as at 2000 Pa. However, the growth of the SiO2 film was saturated at the level of one monolayer when the ozone gas was supplied at 10-4 Pa, which suggests to us a rapid decrease of the sticking (or reaction) probability of ozone on monolayer SiO2.

本文言語English
ページ(範囲)497-501
ページ数5
ジャーナルSurface and Interface Analysis
30
1
DOI
出版ステータスPublished - 2000 8 1
外部発表はい
イベント8th European Conference on Applications of Surface and Interface Analisys, ECASIA 99 - Sevilla, Spain
継続期間: 1999 10 41999 10 8

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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