TY - JOUR
T1 - XPS analysis of ultrathin SiO2 film growth on Si by ozone
AU - Ichimura, S.
AU - Koike, K.
AU - Kurokawa, A.
AU - Nakamura, K.
AU - Itoh, H.
PY - 2000/8/1
Y1 - 2000/8/1
N2 - We investigated the initial oxidation of Si(100) with ozone by comparison with oxidation by oxygen molecules using a specially fabricated ozone generator that could supply concentrated (typically 30 at.%) ozone gas at 1 atm pressure. We measured the thickness of the SiO2 film on the Si by XPS, using a thermal oxide film with a known thickness as a reference. We observed the growth of an SiO2 film on Si by ozone even at a sample temperature of 200 °C, verifying the strong oxidation power of ozone. The SiO2 film was approximately 2.3 nm thick for 100 min of exposure. The kinetics of oxidation with ozone showed a power law dependence relative to exposure time, with almost the same power value for the ozone gas at 1 atm as at 2000 Pa. However, the growth of the SiO2 film was saturated at the level of one monolayer when the ozone gas was supplied at 10-4 Pa, which suggests to us a rapid decrease of the sticking (or reaction) probability of ozone on monolayer SiO2.
AB - We investigated the initial oxidation of Si(100) with ozone by comparison with oxidation by oxygen molecules using a specially fabricated ozone generator that could supply concentrated (typically 30 at.%) ozone gas at 1 atm pressure. We measured the thickness of the SiO2 film on the Si by XPS, using a thermal oxide film with a known thickness as a reference. We observed the growth of an SiO2 film on Si by ozone even at a sample temperature of 200 °C, verifying the strong oxidation power of ozone. The SiO2 film was approximately 2.3 nm thick for 100 min of exposure. The kinetics of oxidation with ozone showed a power law dependence relative to exposure time, with almost the same power value for the ozone gas at 1 atm as at 2000 Pa. However, the growth of the SiO2 film was saturated at the level of one monolayer when the ozone gas was supplied at 10-4 Pa, which suggests to us a rapid decrease of the sticking (or reaction) probability of ozone on monolayer SiO2.
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U2 - 10.1002/1096-9918(200008)30:1<497::AID-SIA791>3.0.CO;2-0
DO - 10.1002/1096-9918(200008)30:1<497::AID-SIA791>3.0.CO;2-0
M3 - Conference article
AN - SCOPUS:0034245080
VL - 30
SP - 497
EP - 501
JO - Surface and Interface Analysis
JF - Surface and Interface Analysis
SN - 0142-2421
IS - 1
T2 - 8th European Conference on Applications of Surface and Interface Analisys, ECASIA 99
Y2 - 4 October 1999 through 8 October 1999
ER -