We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibited homogeneous green color without cracks and inclusions. The crystallinity of the self-standing crystal was characterized by various precise XRD diffraction measurements, such as ω-scan rocking curve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at Half Maximum (FWHM) of the ω-scan rocking curves was about 20 arcsec. The X-ray topography showed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited a sharp single peak indicating the excellent crystallinity. Finally we confirmed rather high crystallinity of the self-standing crystals by etch pits measurement using molten KOH etching.
|ジャーナル||Materials Science Forum|
|出版ステータス||Published - 2007|
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