XRD characterization of the 6H-SiC single crystal grown from Si-C-Ti ternary solution

Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Akihiro Yauchi

研究成果: Article

3 引用 (Scopus)

抄録

We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibited homogeneous green color without cracks and inclusions. The crystallinity of the self-standing crystal was characterized by various precise XRD diffraction measurements, such as ω-scan rocking curve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at Half Maximum (FWHM) of the ω-scan rocking curves was about 20 arcsec. The X-ray topography showed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited a sharp single peak indicating the excellent crystallinity. Finally we confirmed rather high crystallinity of the self-standing crystals by etch pits measurement using molten KOH etching.

元の言語English
ページ(範囲)303-306
ページ数4
ジャーナルMaterials Science Forum
556-557
出版物ステータスPublished - 2007
外部発表Yes

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Silicon carbide
silicon carbides
crystallinity
Single crystals
Crystals
single crystals
Topography
crystals
topography
X rays
Crucibles
crucibles
curves
Full width at half maximum
Molten materials
Etching
x rays
cracks
Diffraction
etching

ASJC Scopus subject areas

  • Materials Science(all)

これを引用

Yashiro, N., Kusunoki, K., Kamei, K., & Yauchi, A. (2007). XRD characterization of the 6H-SiC single crystal grown from Si-C-Ti ternary solution. Materials Science Forum, 556-557, 303-306.

XRD characterization of the 6H-SiC single crystal grown from Si-C-Ti ternary solution. / Yashiro, Nobuyoshi; Kusunoki, Kazuhiko; Kamei, Kazuhito; Yauchi, Akihiro.

:: Materials Science Forum, 巻 556-557, 2007, p. 303-306.

研究成果: Article

Yashiro, N, Kusunoki, K, Kamei, K & Yauchi, A 2007, 'XRD characterization of the 6H-SiC single crystal grown from Si-C-Ti ternary solution', Materials Science Forum, 巻. 556-557, pp. 303-306.
Yashiro, Nobuyoshi ; Kusunoki, Kazuhiko ; Kamei, Kazuhito ; Yauchi, Akihiro. / XRD characterization of the 6H-SiC single crystal grown from Si-C-Ti ternary solution. :: Materials Science Forum. 2007 ; 巻 556-557. pp. 303-306.
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abstract = "We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibited homogeneous green color without cracks and inclusions. The crystallinity of the self-standing crystal was characterized by various precise XRD diffraction measurements, such as ω-scan rocking curve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at Half Maximum (FWHM) of the ω-scan rocking curves was about 20 arcsec. The X-ray topography showed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited a sharp single peak indicating the excellent crystallinity. Finally we confirmed rather high crystallinity of the self-standing crystals by etch pits measurement using molten KOH etching.",
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AU - Kusunoki, Kazuhiko

AU - Kamei, Kazuhito

AU - Yauchi, Akihiro

PY - 2007

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N2 - We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibited homogeneous green color without cracks and inclusions. The crystallinity of the self-standing crystal was characterized by various precise XRD diffraction measurements, such as ω-scan rocking curve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at Half Maximum (FWHM) of the ω-scan rocking curves was about 20 arcsec. The X-ray topography showed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited a sharp single peak indicating the excellent crystallinity. Finally we confirmed rather high crystallinity of the self-standing crystals by etch pits measurement using molten KOH etching.

AB - We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibited homogeneous green color without cracks and inclusions. The crystallinity of the self-standing crystal was characterized by various precise XRD diffraction measurements, such as ω-scan rocking curve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at Half Maximum (FWHM) of the ω-scan rocking curves was about 20 arcsec. The X-ray topography showed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited a sharp single peak indicating the excellent crystallinity. Finally we confirmed rather high crystallinity of the self-standing crystals by etch pits measurement using molten KOH etching.

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KW - Solution growth

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