Zn-diffused In0.53Ga0.47As/InP avalanche photodetector

Yuichi Matsushima, Kazuo Sakai, Shigeyuki Akiba, Takaya Yamamoto

研究成果: Article

37 引用 (Scopus)

抜粋

Mesa In0.53Ga0.47As avalanche photodetectors were successfully fabricated by liquid-phase-epitaxial growth on (100) -InP substrate and Zn-diffusion technique. An avalanche multiplication M as high as 32 was measured under broad-area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron-beam-induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.

元の言語English
ページ(範囲)466-468
ページ数3
ジャーナルApplied Physics Letters
35
発行部数6
DOI
出版物ステータスPublished - 1979
外部発表Yes

    フィンガープリント

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Matsushima, Y., Sakai, K., Akiba, S., & Yamamoto, T. (1979). Zn-diffused In0.53Ga0.47As/InP avalanche photodetector. Applied Physics Letters, 35(6), 466-468. https://doi.org/10.1063/1.91171