ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

H. Jeon, J. Ding, A. V. Nurmikko, W. Xie, M. Kobayashi, R. L. Gunshor

研究成果: Article

56 引用 (Scopus)

抜粋

pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

元の言語English
ページ(範囲)892-894
ページ数3
ジャーナルApplied Physics Letters
60
発行部数7
DOI
出版物ステータスPublished - 1992 12 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用