ZnSe-ZnTe strained layer superlattice on InP substrate by molecular beam epitaxy

Masakazu Kobayashi*, Naoki Mino, Makoto Konagai, Kiyoshi Takahashi

*この研究の対応する著者

研究成果: Article査読

14 被引用数 (Scopus)

抄録

A ZnSe-ZnTe strained layer superlattice (SLS) was grown by molecular beam epitaxy with a 7% lattice mismatch between the components of SLS. InP was used as a substrate material and there was a mismatch of only 3.5% between the components of the SLS and InP. ZnSe was expanded and ZnTe was compressed. Thus the strain was accommodated by the SLS structure and a high-quality superlattice was prepared. Reflective high-energy electron diffraction and X-ray measurements indicated that a high-quality SLS was successfully grown. The superlattice structure was also confirmed by photoluminescence (PL) measurements. Moreover, an interesting phenomenon was observed from the temperature dependence of PL intensity. Strong luminescence was obtained only at a temperature of around 60 K from several samples.

本文言語English
ページ(範囲)550-555
ページ数6
ジャーナルSurface Science
174
1-3
DOI
出版ステータスPublished - 1986 8 3
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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