ZnTe layers on R - and S -plane sapphire substrates

Taizo Nakasu, Shota Hattori, Takeru Kizu, Wei Che Sun, Fukino Kazami, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed. (

本文言語English
ページ(範囲)435-438
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
13
7-9
DOI
出版ステータスPublished - 2016 7 1

ASJC Scopus subject areas

  • 凝縮系物理学

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