ZnTe layers on R - and S -plane sapphire substrates

Taizo Nakasu, Shota Hattori, Takeru Kizu, Wei Che Sun, Fukino Kazami, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi

    研究成果: Article

    2 引用 (Scopus)

    抜粋

    ZnTe epilayers were grown on R -plane ($ 10 \bar 1 4 $) and S -plane ($ 10 \bar 1 1 $) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed.

    元の言語English
    ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
    DOI
    出版物ステータスAccepted/In press - 2016

      フィンガープリント

    ASJC Scopus subject areas

    • Condensed Matter Physics

    これを引用

    Nakasu, T., Hattori, S., Kizu, T., Sun, W. C., Kazami, F., Hashimoto, Y., Kobayashi, M., & Asahi, T. (受理済み/印刷中). ZnTe layers on R - and S -plane sapphire substrates. Physica Status Solidi (C) Current Topics in Solid State Physics. https://doi.org/10.1002/pssc.201510265