ZnTe epilayers were grown on R -plane ($ 10 \bar 1 4 $) and S -plane ($ 10 \bar 1 1 $) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版物ステータス||Accepted/In press - 2016|
ASJC Scopus subject areas
- Condensed Matter Physics